sqjq402e www.vishay.com vishay siliconix s14-2246-rev. a, 10-nov-14 1 document number: 62748 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 40 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? aec-q101 qualified ? 100 % r g and uis tested ? thin 1.9 mm height ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr4 material). d. see solder profile ( www.vishay. com/doc?73257 ). the powerpak 8x8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufactu ring. a solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bo ttom side solder interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary v ds (v) 40 r ds(on) ( ) at v gs = 10 v 0.0017 r ds(on) ( ) at v gs = 4.5 v 0.0020 i d (a) 200 configuration single 4 3 2 1 top view powerpak ? 8x8l single s s s g 4 3 2 1 s ss g bottom view 8.1 mm 8 mm d d 1.9 mm n-channel mosfet d g s ordering information package powerpak 8x8l lead (pb)-free and halogen-free sqjq402e-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 200 a t c = 125 c 127 continuous source curre nt (diode conduction) i s 200 pulsed drain current b i dm 300 single pulse avalanche current l = 0.1 mh i as 85 single pulse avalanche energy e as 361 mj maximum power dissipation t c = 25 c p d 150 w t c = 125 c 50 operating junction and storage temperature range t j , t stg -55 to +175 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 50 c/w junction-to-case (drain) r thjc 1
sqjq402e www.vishay.com vishay siliconix s14-2246-rev. a, 10-nov-14 2 document number: 62748 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 40 v - - 1 a v gs = 0 v v ds = 40 v, t j = 125 c - - 50 v gs = 0 v v ds = 40 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds 5 v 100 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 20 a - 0.0013 0.0017 v gs = 4.5 v i d = 10 a - 0.0015 0.0020 v gs = 10 v i d = 20 a, t j = 125 c - - 0.0026 v gs = 10 v i d = 20 a, t j = 175 c - - 0.0031 forward transconductance b g fs v ds = 15 v, i d = 20 a - 140 - s dynamic b input capacitance c iss v gs = 0 v v ds = 20 v, f = 1 mhz - 10 760 13 500 pf output capacitance c oss - 1370 1800 reverse transfer capacitance c rss - 650 850 total gate charge c q g v gs = 10 v v ds = 20 v, i d = 40 a - 169 260 nc gate-source charge c q gs -32 - gate-drain charge c q gd -29 - gate resistance r g f = 1 mhz 0.6 1.3 2.5 turn-on delay time c t d(on) v dd = 20 v, r l = 0.5 i d ? 40 a, v gen = 10 v, r g = 1 -1930 ns rise time c t r -1525 turn-off delay time c t d(off) - 69 110 fall time c t f -1120 source-drain diode ratings and characteristics b pulsed current a i sm - - 300 a forward voltage v sd i f = 50 a, v gs = 0 - 0.82 1.2 v
sqjq402e www.vishay.com vishay siliconix s14-2246-rev. a, 10-nov-14 3 document number: 62748 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current capacitance gate charge on-resistance vs. junction temperature 0 50 100 150 200 250 03691215 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 32 64 96 128 160 0246810 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = -55 c t c = 125 c t c = 25 c 0.0000 0.0010 0.0020 0.0030 0.0040 0.0050 0 20406080100 r d s (on) -on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 3200 6400 9600 12 800 16 000 0 8 16 24 32 40 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss ss ss gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) i d = 40 a v d s = 20 v 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 20 a v gs = 4.5 v v gs = 10 v
sqjq402e www.vishay.com vishay siliconix s14-2246-rev. a, 10-nov-14 4 document number: 62748 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) source drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage drain source breakdown vs . junction temperature safe operating area 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c 0.000 0.002 0.004 0.006 0.008 0.010 0246810 r d s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c -1.4 -1.0 -0.6 -0.2 0.2 0.6 -50 -25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma 42 44 46 48 50 52 - 50 - 25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 10 m s , 100 m s , limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 100 s 1 s ,10 s , dc i d limited
sqjq402e www.vishay.com vishay siliconix s14-2246-rev. a, 10-nov-14 5 document number: 62748 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62748 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized eff ective transient thermal impedance 1000 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 100 1 square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 10 normalized eff ective transient thermal impedance 100 0.2 0.1 duty cycle = 0.5 1 0.02 0.05 single pulse
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 67144 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 8 x 8l ordering codes for the sq rugged series powe r mosfets in the powerpak 8 x 8l package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sqjq402e sqjq402e-t1-ge3 sqjq402e-t1_ge3
package information www.vishay.com vishay siliconix revision: 06-oct-14 1 document number: 67734 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 8 x 8l case outline dim. millimeters inches min. nom. max. min. nom. max. a 1.70 1.80 1.90 0.067 0.071 0.075 a1 0.00 0.08 0.13 0.000 0.003 0.005 a3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 d 8.00 8.10 8.25 0.315 0.319 0.325 d1 7.80 7.90 8.00 0.307 0.311 0.315 d2 6.70 6.80 6.90 0.264 0.268 0.272 d3 2.85 2.95 3.05 0.112 0.116 0.120 d4 6.11 6.21 6.31 0.241 0.244 0.248 e1.95 2.00 2.05 0.077 0.079 0.081 e 7.90 8.00 8.10 0.311 0.315 0.319 e1 6.12 6.22 6.32 0.241 0.245 0.249 e2 3.94 4.04 4.14 0.140 0.159 0.163 e3 4.69 4.79 4.89 0.185 0.189 0.193 f 0.05 0.10 0.15 0.002 0.004 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.80 0.90 1.00 0.031 0.035 0.039 w 0.30 0.40 0.50 0.012 0.016 0.020 w1 0.30 0.40 0.50 0.012 0.016 0.020 w2 4.39 4.49 4.59 0.173 0.177 0.181 w3 4.54 4.64 4.74 0.179 0.183 0.187 6 10 14 6 10 14 1038038 c14-0891-rev. a, 06-oct-14 dwg: 6026 e b b1 e e1 b2 d1 d a1 1 l1 l 0.25 gauge line w a c top view (sin g le) bottom view (dual) a3 bottom view (sin g le) k b2 e b b1 e e1 d1 d top view (dual) d3 k d3 f e2 w2 w1 w3 e3 d4 d2 e2 w2 w1 w3 e3 d4
pad pattern www.vishay.com vishay siliconix revision: 08-apr-15 1 document number: 67477 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pads for powerpak ? 8 x 8l single note ? linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. dimen s ion s in millimeter s (inche s ) 8.00 (0.31) 0.50 (0.02) 6.90 (0.27) (0, 0) 4.05 (0.16) 3.55 (0.14) 0.44 (0.02) 0.54 (0.02) 1.29 (0.05) 3.23 (0.13) 4.05 (0.16) 6.11 (0.24) 8.25 (0.32) 0.85 (0.03) 0.82 (0.03) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) 4.59 (0.18) 3.99 (0.16) 1.94 (0.08) 3.62 (0.14) 2.47 (0.10) y x
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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